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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor

Citation:
Author Name(s):
Griffiths C.L., Anyele H.T., Matthai C.C., Cafolla A.A., Williams R.H.
Journal:
J. Vac. Sci. Technol. B 11, 1559
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS1-2p3/2
Surface Core-Level Shift (eV) for the first Layer of Atoms
0.39
Energy Uncertainty:
0.01
Background Subtraction Method:
Shirley
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
0.115

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
110, 150
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type P-doped Si(111) with a carrier concentration of ~1E15 cm-3 was washed in acetone and annealed (T = ~ 1373 K, time = 30 s). (7x7) LEED pattern. Peak locations: Voigt function. Branching ratio = 0.5.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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