Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type P-doped Si(111) with a carrier concentration of ~1E15 cm-3 was washed in acetone and annealed (T = ~ 1373 K, time = 30 s). (7x7) LEED pattern. Peak locations: Voigt function. Branching ratio = 0.5. The intensity ratio of the surface/bulk components was 0.07.