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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Sn/Si
the first complete monolayer
tin/silicon
element, IV-VI semiconductor

Citation:
Griffiths C.L., Anyele H.T., Matthai C.C., Cafolla A.A., Williams R.H.
J. Vac. Sci. Technol. B 11, 1559
Pub Year:
1993

Data Processing:
Interface Core-Level Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
110, 150
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(111)-(R3xR3)R30 degrees-Sn. The n-type P-doped Si(111) substrate with a carrier concentration of ~1E15 cm-3 was washed in acetone and annealed (T = ~ 1373 K, time = 30 s). Peak locations: Voigt function. Branching ratio = 0.5. The intensity ratio of the surface/bulk components was 0.03.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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