NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

InTe

indium telluride

chalcogenide, II-VI semiconductor, telluride

Citation:

Author Name(s):

Tkalich A.K., Demin V.N., Zlomanov V.P.

Journal:

J. Solid State Chem. 116, 33

DOI:

Pub Year:

1995

book All Records in this Publication

Data Processing:

Data Type:

Chemical Shift

Line Designation:

CS-AP-3d_5/2,M4N45N45

Chemical Shift (eV)

-0.50

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Ag3d5 = 368.27

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

The sample was cleaned by Ar+ ion bombardment (Ep = 800 eV).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300