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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Al
Formula:
AlN
Name:
aluminum nitride
CAS Registry No:
24304-00-5
Class:
III-V semiconductor, nitride

Citation:
Author Name(s):
Martin G., Botchkarev A., Rockett A., Morkoc H.
Journal:
Appl. Phys. Lett. 68, 2541
DOI:
Pub Year:
1996

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2s
Binding Energy (eV)
115.48
Energy Uncertainty:
0.04
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al/Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The sample was grown on (0001) 6H-SiC and (0001) saphire substrates at 823 K. The wurtzite crystal structure. (1x1) RHEED pattern.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300
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