NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

AlN

aluminum nitride

24304-00-5

III-V semiconductor, nitride

Citation:

Author Name(s):

Martin G., Botchkarev A., Rockett A., Morkoc H.

Journal:

Appl. Phys. Lett. 68, 2541

DOI:

Pub Year:

1996

bookAll Records in this Publication

Data Processing:

Photoelectron Line

115.48

0.04

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

Al/Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The sample was grown on (0001) 6H-SiC and (0001) saphire substrates at 823 K. The wurtzite crystal structure. (1x1) RHEED pattern.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300