Tab Page Summary
III-V semiconductor, nitride
Martin G., Botchkarev A., Rockett A., Morkoc H.
Appl. Phys. Lett. 68, 2541
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Total Records: 7
mixed Gaussian/Lorentzian
Overall Energy Resolution (eV):
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The sample was grown on (0001) 6H-SiC and (0001) saphire substrates at 823 K. The wurtzite crystal structure. (1x1) RHEED pattern.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300