Tab Page Summary
II-VI semiconductor, III-V semiconductor, nitride
Appl. Phys. Lett. 68, 2879
Overall Energy Resolution (eV):
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The epitaxial film was grown on n-type (0001) 6H-SiC by reactive MBE at 923 K. LEED 1x1 pattern.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300