NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

AlN

aluminum nitride

24304-00-5

III-V semiconductor, nitride

Citation:

Author Name(s):

Waldrop J.R., Grant R.W.

Journal:

Appl. Phys. Lett. 68, 2879

DOI:

Pub Year:

1996

book All Records in this Publication

Data Processing:

Photoelectron Line

70.60

0.4

Background Subtraction Method:

other

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The epitaxial film was grown on n-type (0001) 6H-SiC by reactive MBE at 923 K. LEED 1x1 pattern.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300