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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
indium(III) arsenide
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Andersson C.B.M., Olsson L.O, Hakansson M.C., Ilver L., Karlsson U.O., and Kanski J.
J. Phys. IV 4, C9-209
Pub Year:
1994

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
105
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type S-doped InAs(-1-1-1)-(1x1). Peak locations: Voigt function. Emission angle = 60 degrees. Branching ratios were 0.78.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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