NIST X-ray Photoelectron Spectroscopy Database

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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

GaP

gallium phosphide

12063-98-8

chalcogenide, II-VI semiconductor, III-V semiconductor, phosphide

Citation:

Author Name(s):

Waldrop J.R., Grant R.W., Kraut E.A.

Journal:

J. Vac. Sci. Technol. B 11, 1617

DOI:

Pub Year:

1993

bookAll Records in this Publication

Data Processing:

Photoelectron Line

18.54

0.03

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

VBM

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

GaP(001)-(2x4).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300