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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ga
Formula:
GaP
Name:
gallium phosphide
CAS Registry No:
12063-98-8
Class:
chalcogenide, II-VI semiconductor, III-V semiconductor, phosphide

Citation:
Author Name(s):
Waldrop J.R., Grant R.W., Kraut E.A.
Journal:
J. Vac. Sci. Technol. B 11, 1617
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d
Binding Energy (eV)
18.54
Energy Uncertainty:
0.03
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
VBM
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
GaP(001)-(2x4).

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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