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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
germanium
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Santoni A., Dhanak V.R., Goldoni A., Sancrotti M., Modesti S.
Europhys. Lett. 34, 275
Pub Year:
1996

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
45, 75
Overall Energy Resolution (eV):
0.27
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Sb-doped Ge(111)-c(2x8) with a resistivity of 1 ohm cm. The sample was cleaned by cycles of Ar+ ion bombardment and annealing (T = 1100 K). The spectra were recorded at normal emission and 65 degrees. Branching ratio = 0.625.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300, 1020

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