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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ge
Formula:
Ge
Name:
germanium
CAS Registry No:
7440-56-4
Class:
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Author Name(s):
Santoni A., Dhanak V.R., Goldoni A., Sancrotti M., Modesti S.
Journal:
Europhys. Lett. 34, 275
DOI:
Pub Year:
1996

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS1-3d5/2
Surface Core-Level Shift (eV) for the first Layer of Atoms
-0.27
Energy Uncertainty:
0.03
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.35
Lorentzian Width (eV):
0.14

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
45, 75
Overall Energy Resolution (eV):
0.27
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Sb-doped Ge(111)-c(2x8) with a resistivity of 1 ohm cm. The sample was cleaned by cycles of Ar+ ion bombardment and annealing (T = 1100 K). The spectra were recorded at normal emission and 65 degrees. Branching ratio = 0.58.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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