NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

SiC

Si*C

silicon carbide

409-21-2

carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:

Author Name(s):

Hartley M.A., Chiang J.N., Hess D.W., Soane D.S.

Journal:

Appl. Phys. Lett. 54, 1510

DOI:

Pub Year:

1989

bookAll Records in this Publication

Data Processing:

Photoelectron Line

2p_3/2

100.70

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300