Tab Page Summary
indium gallium arsenide alloy (0.2-0.8-1)
alloy, arsenide, III-V semiconductor
Hwang J., Pianetta P., Shih C.K., Spicer W.E., Pao Y. -C., and Harris J.S, Jr.
Appl. Phys. Lett. 51, 1632
Anode Material:
other source
Overall Energy Resolution (eV):
0.3
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
GaAs(001)-c(4x4). The VBMin is located by extrapolating the leading edge of the valence band.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300