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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
In0.9Ga0.1As
In*0.9Ga0.1As
indium gallium arsenide alloy (0.9-0.1-1)
alloy, arsenide, III-V semiconductor

Citation:
Hwang J., Pianetta P., Shih C.K., Spicer W.E., Pao Y. -C., and Harris J.S, Jr.
Appl. Phys. Lett. 51, 1632
Pub Year:
1987

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
other source
X-ray Energy:
30
Overall Energy Resolution (eV):
0.3
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The InGaAs alloy was grown with thicknesses ranging from 400 A to 2000 A. InGaAs(001)-c(4x4). The VBMin is located by extrapolating the leading edge of the valence band.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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