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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O3/GaAs
As 2+ charge state in AsOx
ozone/gallium arsenide
arsenide, IV-VI semiconductor, non-stoichiometric oxide

Citation:
Lan W.M., Sodhi R.N.S., Jau S., Ingrey S.
J. Vac. Sci. Technol. A 8, 1899
Pub Year:
1990

Data Processing:
Chemical Shift
other type of curve fit

Measurement:
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7=84.00
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
GaAs(100) was exposed to ultraviolet light and ozone for 20 min. The oxide thickness was evaluated as 4 nm. The chemical shift is relative to the pure GaAs

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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