NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

TiSi₂

TiSi*₂

titanium disilicide

12039-83-7

II-VI semiconductor, silicide

Citation:

Author Name(s):

Peto G., Zsoldos E., GucziZ L., Schay Z.

Journal:

Solid State Commun. 57, 817

DOI:

Pub Year:

1986

bookAll Records in this Publication

Data Processing:

Photoelectron Line

2p_3/2

98.80

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

TiSi2 films were prepared by solid phase reaction between the evaporated Ti layer (20 nm thick) and the Si(111) substrate and annealed at 973 K.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300