There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
GaAs
Name:
gallium(III) arsenide
CAS Registry No:
1303-00-0
Class:
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Author Name(s):
Breeze P.A., Hartnagel H.L., Sherwood P.M.A.
Journal:
J. Electrochem. Soc. 127, 454
DOI:
Pub Year:
1980

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d
Binding Energy (eV)
41.40
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with two-point correction of energy scale
Comment:

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
An error has occurred. This application may no longer respond until reloaded. Reload 🗙