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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
silicon dioxide
anhydride, catalyst, glass, IV semiconductor, IV-VI semiconductor, mineral, oxide

Citation:
Glachant A., Balland B., Ronda A., Bureau J.C., Plossu C.
Surf. Sci. 205, 287
Pub Year:
1988

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The thin films (~13nm) were thermally grown on p-type boron-doped Si(100) wafers at 1173 K in an atmospheric pressure of O2+3% HCl.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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