NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

SiO₂

Si*O₂

silicon dioxide

7631-86-9

anhydride, catalyst, glass, IV semiconductor, IV-VI semiconductor, mineral, oxide

Citation:

Author Name(s):

Glachant A., Balland B., Ronda A., Bureau J.C., Plossu C.

Journal:

Surf. Sci. 205, 287

DOI:

Pub Year:

1988

bookAll Records in this Publication

Data Processing:

Photoelectron Line

2p_3/2

103.60

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The thin films (~13nm) were thermally grown on p-type boron-doped Si(100) wafers at 1173 K in an atmospheric pressure of O2+3% HCl.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300