Tab Page Summary
anhydride, catalyst, glass, IV semiconductor, IV-VI semiconductor, mineral, oxide
Glachant A., Balland B., Ronda A., Bureau J.C., Plossu C.
Overall Energy Resolution (eV):
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The thin films (~13nm) were thermally grown on p-type boron-doped Si(100) wafers at 1173 K in an atmospheric pressure of O2+3% HCl.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300