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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
SiC
Name:
silicon carbide
CAS Registry No:
409-21-2
Class:
carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:
Author Name(s):
Castle J.E., West R.H.
Journal:
J. Electron Spectrosc. Relat. Phenom. 18, 355
DOI:
Pub Year:
1980

Data Processing:
Data Type:
Auger Parameter
Line Designation:
AP-2p, KL23L23(1D)
Auger Parameter (eV)
1714.10
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Si A2p-K=1716.0
Charge Reference:
Energy Scale Evaluation:
Comment:

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
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