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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
O
Formula:
SiO2/Si
XPS Formula:
SiO2/Si
Name:
silicon dioxide/silicon
CAS Registry No:
7631-86-9
Class:
element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Finster J., Klinkenberg E.-D., Heeg J.
Journal:
Vacuum 41, 1586
DOI:
Pub Year:
1990

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV)
532.80
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
A thermal SiO2 on Si(100) with thickness of 10-100 nm.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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