NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Si₃N₄/InP

Si₃N₄/InP

trisilicon tetranitride/indium phosphide

CAS Registry No:

12033-89-5

Class:

nitride

Citation:

Author Name(s):

Finster J., Klinkenberg E.-D., Heeg J.

Journal:

Vacuum 41, 1586

DOI:

Pub Year:

1990

bookAll Records in this Publication

Data Processing:

Photoelectron Line

397.80

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

60 nm Si3N4/InP(100). Remote plasma enhanced CVD.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300