NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Al₀.₃Ga₀.₇As

Al₀.₃Ga₀.₇As

aluminum gallium arsenide (Al0.3Ga0.7As)

CAS Registry No:

106070-09-1

Class:

arsenide, III-V semiconductor

Citation:

Author Name(s):

Hofmann A., Streubel P., Meisel A.

Journal:

Vacuum 41, 1728

DOI:

Pub Year:

1990

bookAll Records in this Publication

Data Processing:

Photoelectron Line

73.70

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

other anode

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

The samples were grown by liquid phase epitaxy on Te-doped GaAs (100).

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300