NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

O₂/Al₀.₆Ga₀.₄As

AlOx

oxygen/aluminum gallium arsenide (O2/Al0.6Ga0.4As)

CAS Registry No:

Class:

III-V semiconductor, non-stoichiometric oxide

Citation:

Author Name(s):

Hofmann A., Streubel P., Meisel A.

Journal:

Vacuum 41, 1728

DOI:

Pub Year:

1990

bookAll Records in this Publication

Data Processing:

Photoelectron Line

74.90

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

other anode

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

1.0E6-1.0E9 L O2/AlGaAs.

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300