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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
N2/(In,Ga)As
(In,Ga)As
nitrogen/indium gallium arsenide
106070-25-1
arsenide, III-V semiconductor, nitride, non-stoichiometric oxide

Citation:
Thomas III J.H., Kaganowicz G., Robinson J.W.
J. Electrochem. Soc. 135, 1201
Pub Year:
1988

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
3E6 L N2/InGaAs. The sample was exposed to N2 plasma for 1 min. The conditions during the exposure were as follows: 50 mTorr pressure, 400 W at 13.56 mHz excitation and 300 K.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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