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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Sn/Si
tin/silicon
element, IV-VI semiconductor

Citation:
Rich D.H., Miller T., Samsavar A., Lin H.F., Chiang T.-C.
Phys. Rev. B 37, 10221
Pub Year:
1988

Data Processing:
Doublet Separation for Photoelectron Lines
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
80
Overall Energy Resolution (eV):
0.3
Calibration:
FL
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.075-1.2 ML Sn/n-type Si(100). The Sn overlayers were prepared by electron beam evaporation. Substrate temperature was 423-473K. The deposited surface were annealed at 823 K for 2 min. and allowed to cool to 373-423K before measurements. Branching ratio is 0.74.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
373

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