NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

O₂/GaAs

AsOx

oxygen/gallium arsenide

CAS Registry No:

Class:

arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Bartels F., Groll H., Monch W

Journal:

J. Vac. Sci. Technol. B 4, 1100

DOI:

Pub Year:

1986

bookAll Records in this Publication

Data Processing:

Chemical Shift

CS-2p_3/2

3.30

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1.0E5 L O2/ GaAs. The chemical shift is relative to the pure GaAs.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300