NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

GaAs

Name:

gallium(III) arsenide

CAS Registry No:

1303-00-0

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Epp J.M., Dillard J.G.

Journal:

Chem. Mater. 1, 325

DOI:

Pub Year:

1989

bookAll Records in this Publication

Data Processing:

Photoelectron Line

19.00

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

1.2

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Gold

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

n-type GaAs(100) with a Si doping density of 4E17 cm-3.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300