NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

silicon

7440-21-3

element, II-VI semiconductor, IV semiconductor

Citation:

Author Name(s):

Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., Hollinger G.

Journal:

Phys. Rev. B 38, 6084

DOI:

Pub Year:

1988

bookAll Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-2p

Surface Core-Level Shift (eV)

0.80

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

130

Overall Energy Resolution (eV):

Calibration:

Other, Si2p = 99.34

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Si(111)-(7x7). The surface emission is assigned to 7/79 monolayer of so-called rest atoms.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300