Tab Page Summary
gadolinium (Casno:7440-54-2)/silicon
element, IV semiconductor
Henle W.A., Netzer F.P., Cimino R., Braun W.
Surface Core-level Shift for the Second Layer of Atoms
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
0.2
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.8 nm Gd/Si(111)7x7, n-type. Gd coverages were measured with quartz film thickness monitor.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300