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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
SiO2/Si
Si*O2/Si
silicon dioxide/silicon
element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:
Yan Y.L., Helfand M.A., Clayton C.R.
Appl. Surf. Sci. 37, 395
Pub Year:
1989

Data Processing:
Photoelectron Line
other type of curve fit

Measurement:
Anode Material:
Al, Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu = 84.00,932.67
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
The SiO2 film (thickness is 13.5 A) was grown on a Si wafer in rapid thermal processor. The oxidation temperature was 973 K and the reaction time was 30 s.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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