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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
SiO2/Si
XPS Formula:
Si*O2/Si
Name:
silicon dioxide/silicon
CAS Registry No:
7631-86-9
Class:
element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Yan Y.L., Helfand M.A., Clayton C.R.
Journal:
Appl. Surf. Sci. 37, 395
DOI:
Pub Year:
1989

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
103.10
Energy Uncertainty:
0.1
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al, Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu = 84.00,932.67
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
The SiO2 film (thickness is 13.5 A) was grown on a Si wafer in rapid thermal processor. The oxidation temperature was 973 K and the reaction time was 30 s.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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