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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Ti/MoSi2
XPS Formula:
Si atoms in disordered solid solution of Si in Ti
Name:
titanium/molybdenum disilicide
CAS Registry No:
Class:
IV semiconductor, silicide, solid solution

Citation:
Author Name(s):
Sullivan J.P., Hirano T., Komeda T., Meyer III H.M., Trafas B.M., Waddill G.D et al.
Journal:
Appl. Phys. Lett. 56, 671
DOI:
Pub Year:
1990

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS2-2p
Surface Core-Level Shift (eV) for the second Layer of Atoms
-0.99
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
35-135
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
21 A Ti/MoSi2(001)-(1x1). Excitation energy was 35 - 135 eV. The energy is referenced to the bulk state of the Si2p line. The deposition rate was measured with quartz crystal oscillator.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
293
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