NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

InP

indium phosphide

22398-80-7

II-VI semiconductor, III-V semiconductor, phosphide

Citation:

Author Name(s):

Trafas B.M., Aldao C.M., Capasso C., Shapira Y., Boscherini F., Vitomirov I.M.

Journal:

Phys. Rev. B 40, 9811

DOI:

Pub Year:

1989

bookAll Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-2p

Surface Core-Level Shift (eV)

-1.00

Energy Uncertainty:

0.03

Background Subtraction Method:

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

170

Overall Energy Resolution (eV):

0.4

Calibration:

Charge Reference:

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Sn-doped InP(11O).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

293