NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

germanium

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:

Author Name(s):

Bringans R.D., Olmstead M.A., Uhrberg R.I.G., Bachrach R.Z.

Journal:

Phys. Rev. B 36, 9569

DOI:

Pub Year:

1987

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-3d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms

-0.23

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.36

Lorentzian Width (eV):

0.16

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

130

Overall Energy Resolution (eV):

0.3

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Ge(111)-c(2x8).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

293