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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O2/GaAs
oxygen/gallium arsenide
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Cuberes M.T., Sacedon J.L.
Appl. Phys. Lett. 57, 2794
Pub Year:
1990

Data Processing:
Chemical Shift

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
3.2E4 L O2/GaAs(100)-(4x1). The sample was exposed to oxygen with a simultaneous electron bombardment at 150 eV and 0.6 mA/cm2 current density. The energy shift is referenced to the binding energy of As in GaAs(100)-(4x1).

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
293

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