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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
SiOx/Si
SiO*x/Si
silicon oxides/silicon
11126-22-0
anhydride, element, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Cros A., Saoudi R., Hewett C.A., Lau S.S., Hollinger G.
J. Appl. Phys. 67, 1826
Pub Year:
1990

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
0.7
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(100) was oxidized at 573 K for 2 h. determined by trasmission electron microscopy.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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