NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

InP

In*P

indium phosphide

22398-80-7

II-VI semiconductor, III-V semiconductor, phosphide

Citation:

Author Name(s):

Salmagne S.R., Baier H.-U., Monch W.

Journal:

J. Vac. Sci. Technol. B 8, 843

DOI:

Pub Year:

1990

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-4d_5/2

Surface Core-Level Shift (eV)

0.29

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

0.43

Gaussian Width (eV):

0.9388

Lorentzian Width (eV):

0.39

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

InP(110). Branching ratio is 0.67

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

293