NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Si₂N₂O

Si*₂N₂O

dinitride disilicon oxide

CAS Registry No:

12033-76-0

Class:

IV-VI semiconductor, nitride, oxide

Citation:

Author Name(s):

Du H., Tressler R.E., Spear K.E., Pantano C.G.

Journal:

J. Electrochem. Soc. 136, 1527

DOI:

Pub Year:

1989

bookAll Records in this Publication

Data Processing:

Photoelectron Line

2p_3/2

101.40

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Si2N2O is a single phase material, not a simple mixture of SiO2 and Si3N4. The sample was produced by oxidation of CVD alpha-Si3N4.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300