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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Si2N2O
XPS Formula:
Si*2N2O
Name:
dinitride disilicon oxide
CAS Registry No:
12033-76-0
Class:
IV-VI semiconductor, nitride, oxide

Citation:
Author Name(s):
Du H., Tressler R.E., Spear K.E., Pantano C.G.
Journal:
J. Electrochem. Soc. 136, 1527
DOI:
Pub Year:
1989

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p3/2
Binding Energy (eV)
101.40
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Si2N2O is a single phase material, not a simple mixture of SiO2 and Si3N4. The sample was produced by oxidation of CVD alpha-Si3N4.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300
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