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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor

Citation:
Author Name(s):
Miller T., Hsieh T.C., Chiang T.-C.
Journal:
Phys. Rev. B 33, 6983
DOI:
Pub Year:
1986

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-2p
Double Separation (eV)
0.61
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
1.027
Lorentzian Width (eV):
0.182

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
130
Overall Energy Resolution (eV):
0.4
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type Si(111)-(7x7). Branching ratio of the bulk and the surface components are 0.509 and 0.529, respectively. Surface shift1 = -0.355 eV and surface shift2 = 0.769 eV. Surface core-level shift derived from analysis of spectra for photon energies of 108 eV and 130 eV.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300
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