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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ge
Formula:
Ge
Name:
germanium
CAS Registry No:
7440-56-4
Class:
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Author Name(s):
Miller T., Hsieh T.C., Chiang T.-C.
Journal:
Phys. Rev. B 33, 6983
DOI:
Pub Year:
1986

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS2-3d5/2
Surface Core-Level Shift (eV) for the second Layer of Atoms
0.77
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.8343
Lorentzian Width (eV):
0.148

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
90
Overall Energy Resolution (eV):
0.4
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Ge(111)-c(2x8). Branching ratio of the bulk and the surface components are 0.489 and 0.626, respectively. Surface shift1 = 0.268 eV and surface shift2 = 0.770. Surface core-level shift derived from analysis of spectra for photon energies of 40 eV and 90 eV.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300
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