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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ge
Formula:
Ge
Name:
germanium
CAS Registry No:
7440-56-4
Class:
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Author Name(s):
Le Lay G., Kanski J., Nilsson P.O., Karlsson U.O.
Journal:
Appl. Surf. Sci. 56, 178
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-3d
Double Separation (eV)
0.59
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
75
Overall Energy Resolution (eV):
0.30
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type doped Ge(100)c(2x1). The sample was cleaned by Ar+ ion bombardment at 773 K and subsequently annealed (T = 973 K). Emission angle = 60 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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