Tab Page Summary
lower atoms in the dimers and strained layers of atoms below the dimers
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor
Le Lay G., Kanski J., Nilsson P.O., Karlsson U.O.
Surface Core-level Shift for the Second Layer of Atoms
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
0.30
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type doped Ge(100)c(2x1). The sample was cleaned by Ar+ ion bombardment at 773 K and subsequently annealed (T = 973 K). Emission angle = 60 degrees.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300