Tab Page Summary
    
    
    
        
                arsenic atoms in GaAs1-xNx
 
            nitrogen/rubidium/gallium arsenide
 
        
        
            arsenide, III-V semiconductor, nitride
 
        
                Soukiassian P., Starnberg H.I., Kendelewicz T.
 
            
                     
            
            
            
            
            
            
            
            
            
            
            
            
            
            Anode Material:
                other source
Overall Energy Resolution (eV):
                Charge Reference:
                Element
Energy Scale Evaluation:
                Reliable (reported energy within 300 eV of a reference energy)
Comment:
                4E4 L N2/1.8 ML Rb/GaAs(110). The energy is referenced to the bulk state of the As3d line.
Method of Determining Specimen Composition:
                Method of Determining Specimen Crystallinity:
                Specimen Temperature (K):
                300