Tab Page Summary
arsenic atoms in GaAs1-xNx
nitrogen/rubidium/gallium arsenide
arsenide, III-V semiconductor, nitride
Soukiassian P., Starnberg H.I., Kendelewicz T.
Anode Material:
other source
Overall Energy Resolution (eV):
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
4E4 L N2/1.8 ML Rb/GaAs(110). The energy is referenced to the bulk state of the As3d line.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300