There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Tb/Si
terbium/silicon
element, IV semiconductor, lanthanide, rare earth

Citation:
Kennou S., Veuillen J.-Y., Tan T.A.N.
Appl. Surf. Sci. 56, 520
Pub Year:
1992

Data Processing:
Chemical Shift

Measurement:
Anode Material:
other anode
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
12 A Tb/n-type Si(111)-(7x7) with a resistivity of 1.8 - 3.2 ohm cm. The thickness was measured using a quartz-crystal thickness monitor. The substrate surface was cleaned by cycles of Ar+ ion bombardment and annealing (T = 1100 K) by electron bombardment

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙