There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
cadmium telluride
chalcogenide, II-VI semiconductor, IV-VI semiconductor, telluride

Citation:
John P., Leibsle F.M., Miller T., Hsieh T.C., Chiang T.-C.
Superlattices and Microstructures 3, 347
Pub Year:
1987

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
52
Overall Energy Resolution (eV):
0.3
Calibration:
FL
Charge Reference:
Gold
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type CdTe(100)-(2x1),in-doped with resistivity of 2E8 Ohm cm.. MBE generated surfaces were obtained by growing CdTe on the clean sputter/anneal 2x1 surface with substrate at 523 K. Branching ratio is 0.59

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙