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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Sb
Formula:
Sb/CdTe
XPS Formula:
Sb*/CdTe surface shift
Name:
antimony/cadmium telluride
CAS Registry No:
7440-36-0
Class:
element, IV-VI semiconductor, telluride

Citation:
Author Name(s):
John P., Leibsle F.M., Miller T., Hsieh T.C., Chiang T.-C.
Journal:
Superlattices and Microstructures 3, 347
Pub Year:
1987

Data Processing:
Data Type:
Interface Core-Level Shift
Line Designation:
INT-4d5/2
Interface Core-Level Shift
0.55
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.33
Lorentzian Width (eV):
0.29

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
72
Overall Energy Resolution (eV):
0.3
Calibration:
FL
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
10L Sb/CdTe(100)-(2x1). MBE generated surf. were obtained by growing Sb on the clean sputter/anneal 2x1 surf. with substrate at 573K. The energy is referenced to the bulk state of the Sb4d5/2 line. Branching ratio is 0.68

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300
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