NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

O₂/GaAs

O₂/Ga*As

molecular oxygen on gallium arsenide

CAS Registry No:

7782-44-7

Class:

arsenide, element, IV-VI semiconductor

Citation:

Author Name(s):

Lu Q.B., Pan Y.-X., Gao H.

Journal:

J. Appl. Phys. 68, 634

DOI:

Pub Year:

1990

bookAll Records in this Publication

Data Processing:

Chemical Shift

CS-3d

1.40

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.8

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

5E7 L O2/GaAs(100), single crystal Zn-doped to ~1E19 cm-3

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300