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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Tb/Si
Name:
terbium/silicon
CAS Registry No:
7440-21-3
Class:
element, IV semiconductor, lanthanide, rare earth

Citation:
Author Name(s):
Kennou S., Veuillen J.-Y., Tan T.A.N.
Journal:
Appl. Surf. Sci. 56, 520
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Separation from the Strongest Auger Line
Line Designation:
SA-L2VV
Separation Energy (eV)
1.45
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other anode
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
12 A Tb/n-type Si(111)-(7x7) with a resistivity of 1.8 - 3.2 ohm cm. The thickness was measured using a quartz-crystal thickness monitor. The substrate surface was cleaned by cycles of Ar+ ion bombardment and annealing (T = 1100 K) by electron bombardment

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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