NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

AlN

aluminum nitride

24304-00-5

III-V semiconductor, nitride

Citation:

Author Name(s):

Hagio T., Takase A., Umebayashi S.

Journal:

J. Mater. Sci. Lett. 11, 878

DOI:

Pub Year:

1992

book All Records in this Publication

Data Processing:

Photoelectron Line

396.20

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

2.2

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Argon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

The sample was cleaned by Ar+ ion bombardment (Ep = 400 eV, time = 200 s). No Ar+ ion-induced damage to the sample was detected.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300