Tab Page Summary
III-V semiconductor, nitride
Hagio T., Takase A., Umebayashi S.
J. Mater. Sci. Lett. 11, 878
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Total Records: 22
Overall Energy Resolution (eV):
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
The sample was cleaned by Ar+ ion bombardment (Ep = 400 eV, time = 200 s). No Ar+ ion-induced damage to the sample was detected.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300