Tab Page Summary
    
    
    
        
        
        
            III-V semiconductor, stibnide
 
        
                Waldrop J.R., Sullivan G.J., Grant R.W., Kraut E.A., Harrison W.A.
 
            
                J. Vac. Sci. Technol. B 10, 1773
 
            
            
            
            
            
            
            
            
            
            
            
            
            
            
            
            Overall Energy Resolution (eV):
                Charge Reference:
                Valence band minimum
Energy Scale Evaluation:
                Reliable (reported energy within 300 eV of a reference energy)
Comment:
                The epitaxial layers were grown on bulk GaSb(001) substrates at 773 K.
Method of Determining Specimen Composition:
                Method of Determining Specimen Crystallinity:
                Specimen Temperature (K):
                300